炭化ケイ素粉末の低温焼結方法

Low-temperature sintering method of silicon carbide powder

Abstract

PROBLEM TO BE SOLVED: To sinter a silicon carbide sintered body at a low temperature without forming a liquid phase.SOLUTION: Mixture is prepared, wherein the mixture is made by mixing 1-10 wt.% of carbon or material which can be carbonized in terms of carbon as a carbon source, and 0.1-5 wt.% of boron or boron compound in terms of boron as a boron source, in silicon carbide powder. The mixture is sintered with a microwave at 1,800°C or higher. Thereby, even in such the low-temperature sintering, the sintered body of the silicon carbide powder, for example as shown in the figure, which is dense and suppresses abnormal grain growth, can be always obtained.
【課題】炭化ケイ素焼結体を、液相を形成せずに、低温で焼結する。 【解決手段】炭化ケイ素粉末に、炭素源として炭素または炭化することが可能な物質を炭素換算量で1wt%から10wt%、及びホウ素源としてホウ素またはホウ素化合物をホウ素換算量で0.1wt%−5wt%混合した混合物を準備し、この混合物に対して1800℃以上でマイクロ波焼結を行う。これにより、このような低温焼結にも変わらず、例えば図に示すような、緻密でかつ異常粒成長が抑制された炭化ケイ素粉末の焼結体を得ることができる。 【選択図】図1

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